advanced power p-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss -40v simple drive requirement r ds(on) 16m fast switching characteristic i d -45a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance junction-case 2.3 /w rthj-a 62.5 /w rthj-a maximum thermal resistance junction-ambient 110 /w data and specifications subject to change without notice -55 to 150 pulsed drain current 1 -180 thermal data -55 to 150 54.3 parameter total power dissipation operating junction temperature range storage temperature range + 20 -45 halogen-free product continuous drain current, v gs @ 10v -29 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v ap9561gh/j-hf rating -40 maximum thermal resistance, junction-ambient (pcb mount) 3 201005053 1 g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap9561gj) are available for low-profile applications. g d s to-251(j) g d s to-252(h)
ap9561gh/j-hf electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -40 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-30a - - 16 m ? v gs =-4.5v, i d =-20a - - 28 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-20a - 33 - s i dss drain-source leakage current v ds =-32v, v gs =0v - - -1 ua drain-source leakage current (t j =125 o c) v ds =-32v, v gs =0v - - -250 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-20a - 25 40 nc q gs gate-source charge v ds =-32v - 4.4 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 18 - nc t d(on) turn-on delay time 2 v ds =-20v - 9 - ns t r rise time i d =-20a - 46 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-10v - 46 - ns t f fall time r d =1 -95- ns c iss input capacitance v gs =0v - 1700 2720 pf c oss output capacitance v ds =-25v - 360 - pf c rss reverse transfer capacitance f=1.0mhz - 290 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-20a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-20a, v gs =0v, - 31 - ns q rr reverse recovery charge di/dt=-100a/s - 26 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board 2
a p9561gh/j-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0 v -6.0 v -5.0 v v g = - 4.0 v 0 20 40 60 80 100 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -7.0v -6.0v -5.0v v g = - 4.0 v t c =150 o c 10 14 18 22 26 30 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -20 a t c =25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-30a v g =-10v 1 1.2 1.4 1.6 1.8 2 2.2 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v) 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c
ap9561gh/j-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 14 0 102030405060 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds =-32v i d =-20a 0 400 800 1200 1600 2000 2400 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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